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2N7002DW
1.0
7
6
0.8
5
0.6
0.4
4
3
2
0.2
1
0
0
1 2 3
4
5
0
0
0.2
0.4 0.6 0.8 1.0
2.0
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1 On-Region Characteristics
6
I D , DRAIN CURRENT (A)
Figure 2 On-Resistance vs. Drain Current
5
1.5
4
1.0
V GS = 5.0V, I D = 0.05A
3
2
0.5
1
0
-55 -30 -5 20 45 70 95 120 145
T J , JUNCTION TEMPERATURE ( ° C)
Figure 3 On-Resistance vs. Junction Temperature
1
R DS(on)
Limited
DC
0.1
P W = 10s
P W = 1s
P W = 100ms
P W = 10ms
P W = 1ms
0.01
P W = 100μs
0
0
2 4 6 8 10 12 14 16 18
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4 On-Resistance vs. Gate-Source Voltage
0.001
T J(max) = 150°C
T A = 25°C
Single Pulse
0.1
1 10
100
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 5 SOA, Safe Operation Area
2N7002DW
Document number: DS30120 Rev. 16 - 2
3 of 5
www.diodes.com
November 2013
? Diodes Incorporated
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